BTS282Z E3230

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Overview of BTS282Z E3230

Part NumberBTS282Z E3230
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 49V 80A TO220-7
DatasheetsDownload BTS282Z E3230 Datasheet PDFPDF Icon
Price for BTS282Z E3230

Specification of BTS282Z E3230

Status
Obsolete
Series
TEMPFET®
Package
Tube
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
49 V
Current - Continuous Drain (Id) @ 25C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.5mOhm @ 36A, 10V
Vgs(th) (Max) @ Id
2V @ 240A
Gate Charge (Qg) (Max) @ Vgs
232 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4800 pF @ 25 V
FET Feature
Temperature Sensing Diode
Power Dissipation (Max)
300W (Tc)
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
P-TO220-7-230
Package / Case
TO-220-7

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